Home Products Lithography
|
|
Lithography
|
New Product Highlight: Elionix ELS-F125 |
|
The ELS-F125 is the latest Electron Beam Lithography system, a 125kV tool, is the most recent introduction from Elionix. The ELS-F125 offers high performance (5nm lines) and smaller footprint than past models. ELS-F125 Brochure (1.7 MB) >> |
|
ELS-7800 **80kV e-Beam Lithography |
|
State-of-the-art ultra-high precision electron beam lithography with the maximum acceleration voltage of 80kv. The ELS-7800 features: - Adopting a ZrO/W thermal field emission electron gun, the ELS-7800 maintains the electron beam of the minimum diameter of 2nm for a long interval, which is most desirable for the ultra-fine pattern lithography.
- The maximum acceleration voltage of 80kV suppresses the back scattering electrons and thus prevents the line width from widening. This allows for exposing fine lines whose line width is less than 10nm.
- Adopting an 18bit DAC for the beam positioning, the ELS-7800 has achieved the maximum correction position resolution of 0.6nm.
Brochure: ELS-7800 (834 KB pdf) |
|
ELS-7000 **100kV e-Beam Lithography |
|
The ELS-7000 features:
- Employing a large electron current and the maximum acceleration of 100kV, the electron beam of the minimum diameter of 1.8nm is kept stable for a long interval. Even with the resists commonly available on the market, patterns finer than 8nm can be exposed. Based on the achievements of the preceding model, the ELS-7700, the ELS-7000 realized both the long-interval fine electron beam stability and the high throughput.
- ELS-7000 is equipped with a highly rigid stage, which is based on our long experience in developing lithography systems. The 0.31nm beam positioning resolution is realized by utilizing the 18bit DAC. And, by employing a laser interferometer whose reading resolution is 0.6nm, both the stitching accuracy and overlaying accuracy have attained 40nm. ELS-7000 can expose fine patterns across a large area.
- Functions for exposing essential elementary graphic patterns are included in the standard specification. The optional circle pattern generator allows generating such patterns as circumferences and arcs. By attaching the fine-step field size modulation function, ELS-7000 can also be instrumental in creating WDM diffraction gratings.
Brochure: ELS-7000 (834 KB pdf) |
|
ELS-7500EX **50kV e-Beam Lithography |
ELS-7500 EX Features: - It is capable of drawing lines of 10nm width.
- Laser interferometer reads stage position with 0.6nm resolution and helps to achieve at 50nm of stitching and overlay accuracy.
- The use of 18bit DAC provides electron beam positioning with 0.31nm resolution.
- The system is operated completely from a PC and is easy to use.
Brochure: ELS-7500EX (809 KB pdf) |
|
|