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Nanowerk Nanotechnology Research News
Nanotechnology research news headlines from Nanowerk

Sea urchin shaped nanostructures could increase photovoltaic eficiency

Empa researchers have succeeded in growing sea-urchin shaped nanostructures from minute balls of polystyrene beads using a simple electrochemical process. The spines of the sea urchin consist of zinc oxide nanowires. The structured surface should help increasing the efficiency of photovoltaic devices.

Frontiers of Nanotechnology: Impact on India

Department of IT, BT and S + T, Government of Karnataka in association with Vision Group on Nanotechnology, chaired by Prof. C.N.R. Rao, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) and MM Activ Scitech Communications is organizing the 3rd edition of Bangalore Nano.

Physicists identify the transition from superfluid to Mott insulator

Researchers studying a gas of trapped ultracold atoms have identified a set of conditions, never before observed but in excellent agreement with new theoretical predictions, that determine the onset of a critical 'phase transition' in atomic arrays used to model the behavior of condensed-matter systems.

Halbleiter aus Kunststoff besser verstehen

Neue Methode erlaubt aufschlussreiche Einblicke in Polymer-Halbleiter.

SabryCorp, Ltd. Announces Upcoming NanoTech Insights Conference

SabryCorp, Ltd. announced the upcoming 4th NanoTech Insights (NTI) Conference, scheduled for Feb 27-March 2, 2011 in Cairo, Egypt. It will host different diciplines experts to discuss the revolutionary solutions nanotechnology offers to different industrial sectors.

Groundbreaking photonics research from Intel demonstrated at IPR

The Optical Society (OSA) is pleased to recognize the groundbreaking research presented yesterday at its topical meeting, Integrated Photonics Research, Silicon and Nano Photonics (IPR), by Intel Corporation. IPR is currently being held at the Monterey Plaza Hotel in Monterey, Calif., USA through today.

One-of-a-kind chemical formulation enables sub-50 nanometer process technology

Nabil Mistkawi, a new Portland State University (PSU) chemistry graduate and full-time Intel employee, has invented a one-of-a-kind chemical formulation that enables sub-50 nanometer (nm) process technology for advanced microprocessors manufacturing.

Milestone confirms light beams can replace electronic signals for future computers

Intel creates world's first end-to-end silicon photonics connection with integrated lasers.

'White graphene' to the rescue

Hexagonal boron nitride sheets may help graphene supplant silicon.

Researchers create fluorescent biosensor to aid in drug development

Researchers at Carnegie Mellon University have developed a new fluorescent biosensor that could aid in the development of an important class of drugs that target a crucial class of proteins called G protein-coupled receptors (GPCRs).
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Lithography
New Product Highlight: Elionix ELS-F125

The ELS-F125 is the latest Electron Beam Lithography system, a 125kV tool, is the most recent introduction from Elionix. The ELS-F125 offers high performance (5nm lines) and smaller footprint than past models.

ELS-F125 Brochure (1.7 MB) >>

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ELS-7800 **80kV e-Beam Lithography

80kV Electron Beam Lithography 

State-of-the-art ultra-high precision electron beam lithography with the maximum acceleration voltage of 80kv.

The ELS-7800 features:

  • Adopting a ZrO/W thermal field emission electron gun, the ELS-7800 maintains the electron beam of the minimum diameter of 2nm for a long interval, which is most desirable for the ultra-fine pattern lithography.

  • The maximum acceleration voltage of 80kV suppresses the back scattering electrons and thus prevents the line width from widening. This allows for exposing fine lines whose line width is less than 10nm.

  • Adopting an 18bit DAC for the beam positioning, the ELS-7800 has achieved the maximum correction position resolution of 0.6nm.
Brochure: ELS-7800  (834 KB pdf)
 
ELS-7000 **100kV e-Beam Lithography

70kV 

The ELS-7000 features:

  • Employing a large electron current and the maximum acceleration of 100kV, the electron beam of the minimum diameter of 1.8nm is kept stable for a long interval. Even with the resists commonly available on the market, patterns finer than 8nm can be exposed. Based on the achievements of the preceding model, the ELS-7700, the ELS-7000 realized both the long-interval fine electron beam stability and the high throughput.

  • ELS-7000 is equipped with a highly rigid stage, which is based on our long experience in developing lithography systems. The 0.31nm beam positioning resolution is realized by utilizing the 18bit DAC. And, by employing a laser interferometer whose reading resolution is 0.6nm, both the stitching accuracy and overlaying accuracy have attained 40nm. ELS-7000 can expose fine patterns across a large area.

  • Functions for exposing essential elementary graphic patterns are included in the standard specification. The optional circle pattern generator allows generating such patterns as circumferences and arcs. By attaching the fine-step field size modulation function, ELS-7000 can also be instrumental in creating WDM diffraction gratings.

Brochure: ELS-7000 (834 KB pdf)

 
ELS-7500EX **50kV e-Beam Lithography
50 kV E-Beam Lithography System
ELS-7500 EX Features:
  • It is capable of drawing lines of 10nm width.
  • Laser interferometer reads stage position with 0.6nm resolution and helps to achieve at 50nm of stitching and overlay accuracy.

  • The use of 18bit DAC provides electron beam positioning with 0.31nm resolution.

  • The system is operated completely from a PC and is easy to use.

Brochure: ELS-7500EX (809 KB pdf)

 

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