The ELS-7000 features:

• Employing a large electron current and the maximum acceleration of 100kV, the electron beam of the minimum diameter of 1.8nm is kept stable for a long interval. Even with the resists commonly available on the market, patterns finer than 8nm can be exposed. Based on the achievements of the preceding model, the ELS-7700, the ELS-7000 realized both the long-interval fine electron beam stability and the high throughput.

• ELS-7000 is equipped with a highly rigid stage, which is based on our long experience in developing lithography systems. The 0.31nm beam positioning resolution is realized by utilizing the 18bit DAC. And, by employing a laser interferometer whose reading resolution is 0.6nm, both the stitching accuracy and overlaying accuracy have attained 40nm. ELS-7000 can expose fine patterns across a large area.

• Functions for exposing essential elementary graphic patterns are included in the standard specification. The optional circle pattern generator allows generating such patterns as circumferences and arcs. By attaching the fine-step field size modulation function, ELS-7000 can also be instrumental in creating WDM diffraction gratings.

Brochure: ELS-7000 (834 KB pdf)